ASDsemi · FETs & Power MOSFETs · MPN ASDM12N65F-T
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 37nC@10V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 24W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.9pF |
| RDS(on) | 650mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.89nF |
650V 12A 24W Through Hole TO-220F