ASDsemi ASDM100R090NP-T

ASDsemi · FETs & Power MOSFETs · MPN ASDM100R090NP-T

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Specifications

Gate Charge(Qg)49nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.35nF

Technical details

100V 75A 3.1W Through Hole TO-220

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