ASDsemi · FETs & Power MOSFETs · MPN ASDM100R066NQ-R
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 605pF |
| Current - Continuous Drain(Id) | 68A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 108W |
| RDS(on) | 8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.32nF |
| Type | N-Channel |
100V 68A 2.3V 108W 8mΩ@10V 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS