APEC · FETs & Power MOSFETs · MPN AP9997GK
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 720pF |
100V 3.2A 3V 2.8W 120mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS