APEC AP9997GK

APEC · FETs & Power MOSFETs · MPN AP9997GK

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)120mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)720pF

Technical details

100V 3.2A 3V 2.8W 120mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS

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