APEC AP6NA3R2MT

APEC · FETs & Power MOSFETs · MPN AP6NA3R2MT

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Specifications

Gate Charge(Qg)99.2nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)112A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation69.4W
RDS(on)3.28mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)5.44nF

Technical details

N-Channel 60V 112A 69.4W Surface Mount PMPAK-8(5x6)

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