APEC · FETs & Power MOSFETs · MPN AP6679BGH
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| Gate Charge(Qg) | 44nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 54.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 495pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.5nF |
P-Channel 30V 63A 54.3W Surface Mount TO-252