APEC · FETs & Power MOSFETs · MPN AP50T10GH
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| Gate Charge(Qg) | 67nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 37A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 89.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.94nF |
100V 37A 3V 89.2W 30mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS