APEC · FETs & Power MOSFETs · MPN AP4N2R6H
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| Gate Charge(Qg) | 194nC |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 104W |
| RDS(on) | 2.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.16nF |
N-Channel 40V 150A 104W Surface Mount TO-252