APEC AP4525GEM

APEC · FETs & Power MOSFETs · MPN AP4525GEM

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Specifications

Gate Charge(Qg)24nC
Drain to Source Voltage40V
Output Capacitance(Coss)165pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)42mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.23nF
TypeN-Channel + P-Channel

Technical details

40V 6A 3V 2W 42mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS

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