APEC AP4525GEH

APEC · FETs & Power MOSFETs · MPN AP4525GEH

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)165pF
Current - Continuous Drain(Id)15A;12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation10.4W
RDS(on)60mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)115pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.23nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 40V Surface Mount TO-252-4L

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