APEC AP4509AGM

APEC · FETs & Power MOSFETs · MPN AP4509AGM

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC;15nC
Current - Continuous Drain(Id)11.2A;8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V;3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)160pF;185pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)715pF;1.26nF
TypeN-Channel + P-Channel

Technical details

30V 2W 1 N-Channel + 1 P-Channel N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS

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