APEC · FETs & Power MOSFETs · MPN AP4509AGM
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 12nC;15nC |
| Current - Continuous Drain(Id) | 11.2A;8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V;3V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF;185pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 715pF;1.26nF |
| Type | N-Channel + P-Channel |
30V 2W 1 N-Channel + 1 P-Channel N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS