APEC AP4453GYT

APEC · FETs & Power MOSFETs · MPN AP4453GYT

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Specifications

Gate Charge(Qg)24nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)12.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.13W
Reverse Transfer Capacitance (Crss@Vds)265pF
RDS(on)10.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.96nF

Technical details

30V 12.8A 1.5V 3.13W 10.1mΩ@10V 1 P-Channel PMPAK(3x3) Single FETs, MOSFETs RoHS

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