APEC · FETs & Power MOSFETs · MPN AP4439GM
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| Gate Charge(Qg) | 70nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 13.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 375pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.08nF |
30V 13.3A 3V 2.5W 10mΩ@10V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS