APEC AP4435GM

APEC · FETs & Power MOSFETs · MPN AP4435GM

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Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage30V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)20mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.175nF
Vgs±20V

Technical details

P-Channel 30V 9A 2.5W Surface Mount SO-8

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