APEC AP3R303GMT

APEC · FETs & Power MOSFETs · MPN AP3R303GMT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21nC
Current - Continuous Drain(Id)105A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation56.8W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.24nF

Technical details

N-Channel 30V 105A 56.8W Surface Mount PMPAK-8(5x6)

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