APEC AP3N9R5YT

APEC · FETs & Power MOSFETs · MPN AP3N9R5YT

No reviews yet — be the first to review APEC AP3N9R5YT.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)38.4nC
Current - Continuous Drain(Id)37.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.57W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

30V 37.8A 3V 3.57W 9.5mΩ@10V 1 N-channel PMPAK-8(3x3) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs