APEC AP3N9R5MT

APEC · FETs & Power MOSFETs · MPN AP3N9R5MT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)38.4nC
Current - Continuous Drain(Id)37.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation22.7W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

30V 37.8A 1.3V 22.7W 9.5mΩ@10V 1 N-channel PMPAK-8(5x6) Single FETs, MOSFETs RoHS

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