APEC · FETs & Power MOSFETs · MPN AP3N1R8MT
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| Gate Charge(Qg) | 60nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 820pF |
| Current - Continuous Drain(Id) | 165A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 83.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF |
| RDS(on) | 3.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.85nF |
| Type | N-Channel |
30V 165A 3V 83.3W 3.6mΩ@4.5V 1 N-channel N-Channel PMPAK(5x6) Single FETs, MOSFETs RoHS