APEC AP3C023AMT

APEC · FETs & Power MOSFETs · MPN AP3C023AMT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC;13.5nC
Current - Continuous Drain(Id)12A;10A
Output Capacitance(Coss)220pF;235pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V;2.5V
Pd - Power Dissipation3.57W
RDS(on)10.4mΩ@10V;23.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)130pF;160pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.45nF;1.55nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 3.57W Surface Mount PMPAK-5x6

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