APEC · FETs & Power MOSFETs · MPN AP30T10GK
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| Gate Charge(Qg) | 11.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.78W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 850pF |
100V 4.8A 2.5V 2.78W 55mΩ@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS