APEC AP30T10GH

APEC · FETs & Power MOSFETs · MPN AP30T10GH

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Specifications

Gate Charge(Qg)21.6nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation44.6W
RDS(on)55mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)1.34nF

Technical details

N-Channel 100V 19A 44.6W Surface Mount TO-252

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