APEC AP10TN135N

APEC · FETs & Power MOSFETs · MPN AP10TN135N

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage100V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)2.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.38W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)135mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)980pF
TypeN-Channel

Technical details

N-Channel 100V 2.1A 1.38W Surface Mount SOT-23

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