APEC AP10TN004CMT

APEC · FETs & Power MOSFETs · MPN AP10TN004CMT

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Specifications

Gate Charge(Qg)73nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)650pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
RDS(on)4.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)4.12nF

Technical details

100V 100A 4V 104W 4.8mΩ@10V 1 N-channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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