APEC AP09N70I-A

APEC · FETs & Power MOSFETs · MPN AP09N70I-A

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Specifications

Gate Charge(Qg)44nC
Drain to Source Voltage650V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)750mΩ@10V
Number-
Input Capacitance(Ciss)2.66nF
TypeN-Channel

Technical details

650V 9A 4V 42W 750mΩ@10V N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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