AOS · FETs & Power MOSFETs · MPN AOY2N60
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 11nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| RDS(on) | 4.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 295pF |
600V 2A 4V 4.7Ω@10V 1 N-channel TO-251B Single FETs, MOSFETs RoHS