AOS AOWF8N50

AOS · FETs & Power MOSFETs · MPN AOWF8N50

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation27.8W
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.042nF

Technical details

500V 8A 4.5V 27.8W 850mΩ@10V 1 N-channel TO-262F Single FETs, MOSFETs RoHS

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