AOS · FETs & Power MOSFETs · MPN AOW25S65
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| Gate Charge(Qg) | 26.4nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.278nF |
650V 25A 2.6V 190mΩ@10V 1 N-channel TO-262 Single FETs, MOSFETs RoHS