AOS · FETs & Power MOSFETs · MPN AOV11S60
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 11nC@10V |
| Current - Continuous Drain(Id) | 650mA;8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 1.42pF |
| RDS(on) | 500mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 545pF |
600V 2.8V 500mΩ@10V 1 N-channel DFN-4-EP(8x8) Single FETs, MOSFETs RoHS