AOS AOTS21319C

AOS · FETs & Power MOSFETs · MPN AOTS21319C

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.2W
RDS(on)100mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)320pF

Technical details

30V 2.7A 2.2V 1.2W 100mΩ@10V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS

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