AOS AOTF9N50

AOS · FETs & Power MOSFETs · MPN AOTF9N50

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation38.5W
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.042nF

Technical details

500V 9A 4.5V 38.5W 850mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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