AOS · FETs & Power MOSFETs · MPN AOTE21115C
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| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 5.1A |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 40mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Drain to Source Voltage | 20V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 930pF |
| Gate Charge(Qg) | 17nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
5.1A 1.5W 40mΩ@4.5V 950mV 2 P-Channel TSSOP-8 FET, MOSFET Arrays RoHS