AOS AOT8N50L

AOS · FETs & Power MOSFETs · MPN AOT8N50L

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage-
Output Capacitance(Coss)112pF
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))850mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)9.4pF
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.042nF
TypeN-Channel

Technical details

850mV 4.5Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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