AOS AOT8N50

AOS · FETs & Power MOSFETs · MPN AOT8N50

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)28nC@10V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation192W
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.042nF

Technical details

500V 8A 4.5V 192W 850mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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