AOS AOT66616L

AOS · FETs & Power MOSFETs · MPN AOT66616L

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)60nC@10V
Current - Continuous Drain(Id)38.5A;140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation8.3W;125W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.87nF

Technical details

60V 2.4V 3.2mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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