AOS · FETs & Power MOSFETs · MPN AOT66613L
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 44.5A;120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 8.3W;260W |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.3nF |
60V 3.5V 2.5mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS