AOS · FETs & Power MOSFETs · MPN AOT5N100
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 195W |
| RDS(on) | 4.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
1kV 4A 4.5V 195W 4.2Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS