AOS AOT410L

AOS · FETs & Power MOSFETs · MPN AOT410L

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Specifications

Gate Charge(Qg)129nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)12A;150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.9W;333W
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.95nF

Technical details

100V 4V 6.5mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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