AOS AOT11N70

AOS · FETs & Power MOSFETs · MPN AOT11N70

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage700V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation271W
RDS(on)870mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.15nF

Technical details

700V 11A 4.5V 271W 870mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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