AOS · FETs & Power MOSFETs · MPN AOT10N65
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.645nF |
650V 10A 4.5V 250W 1Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS