AOS AOSP66920

AOS · FETs & Power MOSFETs · MPN AOSP66920

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)13.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF

Technical details

N-Channel 100V Surface Mount SOIC-8

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