AOS AOSP21321

AOS · FETs & Power MOSFETs · MPN AOSP21321

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)155pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.18nF

Technical details

P-Channel 30V 11A 3.1W Surface Mount SOIC-8

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