AOS AOSP21313C

AOS · FETs & Power MOSFETs · MPN AOSP21313C

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)33nC@10V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.5W
RDS(on)32mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.1nF

Technical details

30V 7A 2.2V 2.5W 32mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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