AOS · FETs & Power MOSFETs · MPN AOSP21311C
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 42mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 720pF |
30V 6A 2.2V 2.5W 42mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS