AOS AOSP21307

AOS · FETs & Power MOSFETs · MPN AOSP21307

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)11.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.995nF

Technical details

P-Channel 30V 14A 3.1W Surface Mount SOIC-8

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