AOS AOSD62666E

AOS · FETs & Power MOSFETs · MPN AOSD62666E

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Specifications

Current - Continuous Drain(Id)9.5A
RDS(on)14.5mΩ@10V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number2 N-Channel
Input Capacitance(Ciss)755pF
Gate Charge(Qg)13.5nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 9.5A 2.5W Surface Mount SOIC-8

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