AOS AOSD21313C

AOS · FETs & Power MOSFETs · MPN AOSD21313C

No reviews yet — be the first to review AOS AOSD21313C.

Specifications

Current - Continuous Drain(Id)5.7A
Pd - Power Dissipation1.7W
RDS(on)32mΩ@10V
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
Number2 P-Channel
Input Capacitance(Ciss)1.1nF
Gate Charge(Qg)33nC@10V
Operating Temperature-55℃~+150℃

Technical details

5.7A 1.7W 32mΩ@10V 2.2V 2 P-Channel SOIC-8 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs