AOS · FETs & Power MOSFETs · MPN AOSD21307
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| Current - Continuous Drain(Id) | 9A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 16mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Drain to Source Voltage | 30V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.995nF |
| Gate Charge(Qg) | 51nC@10V |
| Operating Temperature | -55℃~+150℃ |
9A 2W 16mΩ@10V 2.3V 2 P-Channel SOIC-8 FET, MOSFET Arrays RoHS