AOS · FETs & Power MOSFETs · MPN AONV210A60
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 4.1A;20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 8.3W;208W |
| RDS(on) | 210mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.935nF |
600V 4V 210mΩ@10V 1 N-channel DFN-4(8x8) Single FETs, MOSFETs RoHS