AOS · FETs & Power MOSFETs · MPN AONS660A70F
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| Gate Charge(Qg) | 14.5nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 1.7A;9.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 4.1W;138W |
| RDS(on) | 660mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 900pF |
700V 4V 660mΩ@10V 1 N-channel DFN-8-EP(5x6) Single FETs, MOSFETs RoHS