AOS AONS1R6A70

AOS · FETs & Power MOSFETs · MPN AONS1R6A70

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage700V
Current - Continuous Drain(Id)1.1A;4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation4.1W;78W
RDS(on)1.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)354pF

Technical details

700V 3.5V 1.6Ω@10V 1 N-channel DFN-8-EP(5x6) Single FETs, MOSFETs RoHS

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